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PDF MJE13005 Data sheet ( Hoja de datos )
| Número de pieza | MJE13005 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | CENTRAL SEMICONDUCTOR | |
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DATA SHEET
MJE13005
NPN SILICON
POWER TRANSISTOR
JEDEC TO-220 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power
switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCEV
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Peak Base Current
IBM
Emitter Current
IE
Peak Emitter Current
IEM
Power Dissipation (TA=25°C)
PD
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
400
700
9.0
4.0
8.0
2.0
4.0
6.0
12
2.0
75
-65 to +150
62.5
1.67
UNITS
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
ICEV
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
VCE=700V, VBE(OFF)=1.5V
VCE=700V, VBE(OFF)=1.5V, TC=100°C
VEB=9.0V
IC=10mA
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
IC=4.0A, IB=1.0A
IC=1.0A, IB=0.2A
IC=2.0A, IB=0.5A
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=2.0A
400
10
8.0
MAX
1.0
5.0
1.0
0.5
0.6
1.0
1.2
1.6
60
40
UNITS
mA
mA
mA
V
V
V
V
V
V
(Continued)
R1
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJE13005.PDF ] | |
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