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PDF FGB20N60SF Data sheet ( Hoja de datos )

Número de pieza FGB20N60SF
Descripción 20A Field Stop IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGB20N60SF
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
GCE
D2-PAK
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB(FR4 or G-10 material)
C
G
E
Ratings
600
20
40
20
60
208
83
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. C1
1
www.fairchildsemi.com

1 page




FGB20N60SF pdf
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50 60
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Collector Current
300
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
100
td(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 10
100 TC = 25oC
TC = 125oC
tr
10 td(on)
3
0 10 20 30
Collector Current, IC [A]
Figure 16. Switching Loss vs.
Gate Resistance
3
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
1 TC = 25oC
TC = 125oC
Eon
40
tf
10
0 10 20 30
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
1
Eon
40
Eoff
0.1
0.02
0
10 20 30
Collector Current, IC [A]
40
Eoff
0.1
0
10 20 30 40 50
Gate Resistance, RG []
60
Figure 18. Turn off Switching
SOA Characteristics
80
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. C1
5
www.fairchildsemi.com

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