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PDF CEH2609 Data sheet ( Hoja de datos )
| Número de pieza | CEH2609 | |
| Descripción | Dual Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
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CEH2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V.
RDS(ON) = 80mΩ @VGS = 2.5V.
-20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V.
RDS(ON) = 145mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
4
5
6
3
2
1
TSOP-6
G1(1)
D1(6)
G2(3)
S1(5)
D2(4)
S2(2)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 3.5
IDM 14
P-Channel
-20
±12
-2.5
10
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2013.Mar
http://www.cetsemi.com
1 page  
P-CHANNEL
10
8
-VGS=4.5,3.5,2.5V
6
4
2 -VGS=1.5V
0
0.0 0.5
1 1.5
2 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
600
500
Ciss
400
300
200
100
Crss
Coss
0
02
4
6
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CEH2609
5
25 C
4
3
2
1
TJ=125 C
-55 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2
ID=-2.5A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
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| PDF Descargar | [ Datasheet CEH2609.PDF ] | |
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