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PDF IRF6618PbF Data sheet ( Hoja de datos )

Número de pieza IRF6618PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF6618PbF Hoja de datos, Descripción, Manual

l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97240A
IRF6618PbF
IRF6618TRPbF
DirectFET™ Power MOSFET ‚
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.2m@ 10V 3.4m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
43nC 15nC 4.0nC 46nC 28nC 1.64V
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
MT DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
30
±20
170
30
24
240
210
24
Units
V
A
mJ
A
6
5 ID = 30A
4
3 TJ = 125°C
2
1 TJ = 25°C
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ID= 24A
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.75mH, RG = 25, IAS = 24A.
1
08/17/07

1 page




IRF6618PbF pdf
IRF6618PbF
1000.00
100.00
10.00
TJ = 150°C
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1.00 TJ = 25°C
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
180
10
1msec
TC = 25°C
Tj = 150°C
Single Pulse
1
01
10msec
10 100
1000
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
2.5
160
140 2.0
120
1.5
100 ID = 250µA
80 1.0
60
40 0.5
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 11. Maximum Drain Current vs.
Case Temperature
900
800
700
600
0.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 12. Threshold Voltage vs. Temperature
ID
TOP 9.3A
11A
BOTTOM 24A
500
400
300
200
100
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
5

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