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PDF 74HC245-Q100 Data sheet ( Hoja de datos )

Número de pieza 74HC245-Q100
Descripción Octal bus tranceiver
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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74HC245-Q100; 74HCT245-Q100
Octal bus tranceiver; 3-state
Rev. 1 — 22 July 2013
Product data sheet
1. General description
The 74HC245-Q100; 74HCT245-Q100 is an 8-bit transceiver with 3-state outputs. The
device features an output enable (OE) and send/receive (DIR) for direction control. A
HIGH on OE causes the outputs to assume a high-impedance OFF-state. Inputs include
clamp diodes that enable the use of current limiting resistors to interface inputs to voltages
in excess of VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Octal bidirectional bus interface
Non-inverting 3-state outputs
Multiple package options
Complies with JEDEC standard no. 7A
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name
Description
Version
74HC245D-Q100
74HCT245D-Q100
40 C to +125 C
SO20
plastic small outline package; 20 leads;
body width 7.5 mm
SOT163-1
74HC245PW-Q100 40 C to +125 C
74HCT245PW-Q100
TSSOP20 plastic thin shrink small outline package; 20 leads; SOT360-1
body width 4.4 mm
74HC245BQ-Q100 40 C to +125 C
74HCT245BQ-Q100
DHVQFN20 plastic dual-in-line compatible thermal enhanced SOT764-1
very thin quad flat package no leads; 20 terminals;
body 2.5 4.5 0.85 mm

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74HC245-Q100 pdf
NXP Semiconductors
74HC245-Q100; 74HCT245-Q100
Octal bus tranceiver; 3-state
9. Static characteristics
Table 6. Static characteristics type 74HC245-Q100
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Tamb = 25 C
VIH HIGH-level input voltage
VIL LOW-level input voltage
VOH HIGH-level output voltage
VOL LOW-level output voltage
II input leakage current
IOZ OFF-state output current
ICC supply current
CI input capacitance
CI/O input/output capacitance
Tamb = 40 C to +85 C
VIH HIGH-level input voltage
VIL LOW-level input voltage
VOH HIGH-level output voltage
Conditions
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
IO = 20 A; VCC = 4.5 V
IO = 20 A; VCC = 6.0 V
IO = 6.0 mA; VCC = 4.5 V
IO = 7.8 mA; VCC = 6.0 V
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
IO = 20 A; VCC = 4.5 V
IO = 20 A; VCC = 6.0 V
IO = 6.0 mA; VCC = 4.5 V
IO = 7.8 mA; VCC = 6.0 V
VI = VCC or GND; VCC = 6.0 V
VI = VIH or VIL; VO = VCC or GND;
VCC = 6.0 V
VI = VCC or GND; IO = 0 A;
VCC = 6.0 V
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
IO = 20 A; VCC = 4.5 V
IO = 20 A; VCC = 6.0 V
IO = 6.0 mA; VCC = 4.5 V
IO = 7.8 mA; VCC = 6.0 V
74HC_HCT245_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 July 2013
Min
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.98
5.48
-
-
-
-
-
-
-
-
-
-
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.84
5.34
Typ Max Unit
1.2 -
V
2.4 -
V
3.2 -
V
0.8 0.5 V
2.1 1.35 V
2.8 1.8 V
2.0 -
4.5 -
6.0 -
4.32 -
5.81 -
V
V
V
V
V
0 0.1 V
0 0.1 V
0 0.1 V
0.15 0.26 V
0.16 0.26 V
- 0.1 A
- 0.5 A
- 8.0 A
3.5 -
10 -
pF
pF
--V
--V
--V
- 0.5 V
- 1.35 V
- 1.8 V
--V
--V
--V
--V
--V
© NXP B.V. 2013. All rights reserved.
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74HC245-Q100 arduino
NXP Semiconductors
74HC245-Q100; 74HCT245-Q100
Octal bus tranceiver; 3-state
Table 9. Dynamic characteristics type 74HCT245-Q100
GND = 0 V; for test circuit, see Figure 7.
Symbol Parameter
Conditions
Tamb = 25 C
tpd propagation delay
An to Bn or Bn to An;
see Figure 5
ten enable time
tdis disable time
tt transition time
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
An, Bn; VCC = 4.5 V;
see Figure 5
CPD power dissipation capacitance
Tamb = 40 C to +85 C
tpd propagation delay
ten enable time
tdis disable time
tt transition time
VI = GND to VCC 1.5 V
VCC = 4.5 V; see Figure 5
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
An, Bn; VCC = 4.5 V;
see Figure 5
Tamb = 40 C to +125 C
tpd propagation delay
ten enable time
tdis disable time
tt transition time
VCC = 4.5 V; see Figure 5
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
OE to An or OE to Bn;
VCC = 4.5 V; see Figure 6
An, Bn; VCC = 4.5 V;
see Figure 5
[1] tpd is the same as tPLH and tPHL.
[2] ten is the same as tPZH and tPZL.
[3] tdis is the same as tPLZ and tPHZ.
[4] tt is the same as tTHL and tTLH.
[5] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
Min Typ Max Unit
[1]
- 12 22 ns
- 10 - ns
[2] -
16 30 ns
[3] -
16 30 ns
[4] -
5 12 ns
[5] -
30 -
pF
[1] - - 28 ns
[2] - - 38 ns
[3] - - 38 ns
[4] - - 15 ns
[1] - - 33 ns
[2] - - 45 ns
[3] - - 45 ns
[4] - - 18 ns
74HC_HCT245_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 July 2013
© NXP B.V. 2013. All rights reserved.
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