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PDF IRGP4750D-EPbF Data sheet ( Hoja de datos )

Número de pieza IRGP4750D-EPbF
Descripción Insulated Gate Bipolar Transistor
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP4750D-EPbF Hoja de datos, Descripción, Manual

  IRGP4750DPbF
IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
 Industrial Motor Drive
 UPS
 Solar Inverters
 Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
G
E
n-channel
G
Gate
E
GC
IRGP4750DPbF 
TO247AC 
C
Collector
E
GC
IRGP4750DEPbF 
TO247AD 
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4750DPbF
IRGP4750D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4750DPbF
IRGP4750D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
70
50
105
140
80
50
140
±20
273
136
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.55
0.95
–––
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 13, 2014

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IRGP4750D-EPbF pdf
 
10
8
ICE = 18A
6
ICE = 35A
ICE = 70A
4
2
0
5 10 15 20
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
8
7
6
5 EON
4
3
2 EOFF
1
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
6
5
4 EON
3
2
1 EOFF
0
0 20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP4750DPbF/IRGP4750D-EPbF
140
120 TJ = 25°C
TJ = 175°C
100
80
60
40
20
0
4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tF
100 tdOFF
tdON
tR
10
1
0 10 20 30 40 50 60 70
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
1000
100
tR
tdOFF
tF
tdON
10
0
20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
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November 13, 2014

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IRGP4750D-EPbF arduino
 
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4750DPbF/IRGP4750D-EPbF
TO-247AD Part Marking Information
EXAM PLE:
TH IS IS A N IR G P 3 0 B 1 2 0 K D -E
W ITH A S S E M B L Y
LOT CODE 5657
ASSEM BLED ON WW 35, 2000
IN TH E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
IN TE R N A TIO N A L
R E C TIF IE R
LO G O
ASSEM BLY
LOT CODE
035H
56 57
PART NUM BER
DATE CO DE
YEAR 0 = 2000
WEEK 35
LIN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
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November 13, 2014

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