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PDF NP88N03KDG Data sheet ( Hoja de datos )
| Número de pieza | NP88N03KDG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N03KDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N03KDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on)1 = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A)
RDS(on)2 = 3.9 mΩ MAX. (VGS = 4.5 V, ID = 44 A)
• Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V)
• 4.5 V gate drive type
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N03KDG
TO-263 (MP-25ZK)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±88
±352
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
200
Channel Temperature
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tch 175
Tstg −55 to +175
IAR 59
EAR 348
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17404EJ3V0DS00 (3rd edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-100
-50
VGS = 4.5 V
10 V
ID = 44 A
Pulsed
0 50 100 150 200
Tch - Channel Temperature - °C
10000
1000
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 0 Ω
tr
100
td(off)
td(on)
10
0.1
tf
1 10
ID - Drain Current – A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
VGS = 10 V
100 4.5 V
10 0 V
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
NP88N03KDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
VDD = 24 V
25 15 V
ID = 88 A
12
10
20 VDD = 6 V
ID = 65 A
15
8
6
10 VGS 4
5 VDS
2
00
0 25 50 75 100 125 150 175 200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
di/dt = 100 A/µs
VGS = 0 V
10
IF - Diode Forward Current - A
100
Data Sheet D17404EJ3V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP88N03KDG.PDF ] | |
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