|
|
PDF IRF7748L1TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7748L1TRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7748L1TRPbF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
IRF7748L1TRPbF
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
60V min
VGS
±20V max
RDS(on)
1.7m@ 10V
Qg tot
Qgd
Vgs(th)
146nC
40nC
2.9V
SSS
D
G SSS
D
Applicable DirectFET Outline and Substrate Outline
DirectFET™ ISOMETRIC
L6
SB SC
M2 M4
L4 L6 L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7748L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7748L1TRPbF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
EAS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
60
±20
148
104
28
592
129
89
Units
V
A
mJ
A
8
I D = 89A
6
4
T J = 125°C
2
T J = 25°C
0
2 4 6 8 10 12 14 16 18 20
V GS, Gate -to -Source Voltage (V)
Notes Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2012 International Rectifier
3.0
V GS = 6V
2.5
V GS = 7V
2.0 V GS = 10V
1.5 V GS = 12V
1.0
0
25 50 75 100 125 150 175
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
200
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A.
February 18, 2013
1 page  
1000
100 TJ = 175°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
1.4
10000
1000
100
IRF7748L1TRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Source-Drain Diode Forward Voltage
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
600
500
400
Fig 11. Maximum Safe Operating Area
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 1.0A
ID = 10mA
ID = 1.0mA
1.0 ID = 250µA
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID
TOP
11.4A
19.1A
BOTTOM 89A
300
200
100
5 www.irf.com
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2012 International Rectifier
February 18, 2013
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7748L1TRPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7748L1TRPbF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |