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PDF ZXMN6A08KTC Data sheet ( Hoja de datos )
| Número de pieza | ZXMN6A08KTC | |
| Descripción | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXMN6A08KTC (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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A Product Line of
Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on)
80mΩ @ VGS= 10V
150mΩ @ VGS= 4.5V
ID
TA = 25°C
7.90A
5.75A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: TO-252
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
DD
TOP VIEW
D
GS
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMN6A08KTC
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
6A08
YYWW
ZXMN = Product Type Marking Code, Line 1
6A08 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN6A08K
Document Revision: 2
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
1 page  
Typical Characteristics
A Product Line of
Diodes Incorporated
ZXMN6A08K
10 T = 25°C 10V
5V
1
4.5V
4V
3.5V
3V
0.1
V
GS
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10 T = 150°C
1
10V 5V
4V
3.5V
3V
2.5V
0.1
V
GS
0.01
2V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
0.1
V = 10V
DS
0.01
2345
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
2.0
1.8
V = 10V
GS
1.6
I = 4.8A
D
1.4
R
DS(on)
1.2
1.0
0.8
V
GS(th)
0.6
0.4
V =V
GS DS
0.2
I = 250uA
D
0.0
-50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
3V
1
T = 25°C
3.5V
4V 4.5V
V
GS
10
T = 150°C
1
5V
0.1 7V
10V
0.1 1 10
I Drain Current (A)
D
On-Resistance v Drain Current
0.1
T = 25°C
0.01
0.2 0.4 0.6 0.8 1.0 1.2
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMN6A08K
Document Revision: 2
5 of 8
www.diodes.com
July 2009
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXMN6A08KTC.PDF ] | |
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