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PDF ZXMN3AMCTA Datasheet ( Hoja de datos )

Número de pieza ZXMN3AMCTA
Descripción 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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ZXMN3AMCTA Hoja de datos, Descripción, Manual
A Product Line of
Diodes Incorporated
ZXMN3AMC
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on) max
120mΩ @ VGS = 10V
180mΩ @ VGS = 4.5V
ID max
TA = 25°C
(Notes 4 & 7)
3.7A
3.0A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
DC-DC Converters
Power management functions
Disconnect switches
Portable applications
Features and Benefits
Low profile package, for thin applications
Low RθJA, thermally efficient package
6mm2 footprint, 50% smaller than TSOP6 and SOT23-6
Low on-resistance
Fast switching speed
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN3020B-8
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
DFN3020B-8
D2 D2 D1 D1
D1 D2
Top View
Bottom View
D2 D1
G1
G2 S2 G1 S1
Bottom View
Pin-Out
Pin 1
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMN3AMCTA
Marking
DNB
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3000
Marking Information
DNB
DNB = Product Type Marking Code
Top View, Dot Denotes Pin 1
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
1 of 8
www.diodes.com
December 2010
© Diodes Incorporated

1 page

ZXMN3AMCTA pdf
Typical Electrical Characteristics
A Product Line of
Diodes Incorporated
ZXMN3AMC
T = 25°C
10
1
0.1
10V 7V 5V
4.5V
4V
3.5V
3V
V
GS
2.5V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
10V 7V 5V
4.5V
4V
3.5V
3V
2.5V
V
0.1 GS
2V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10
V = 10V
DS
T = 150°C
1
T = 25°C
0.1
2.0 2.5 3.0 3.5 4.0 4.5
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
5.0
1.6
V = 10V
GS
1.4 I = 2.5A
D
R
DS(on)
1.2
1.0
0.8
V
GS(th)
0.6
0.4
-50
V =V
GS DS
I = 250uA
D
0 50 100
Tj Junction Temperature (°C)
Normalised Curves v Temperature
150
2.5V
1
3V 3.5V
4V
V
GS
4.5V
5V
7V
0.1 10V
T = 25°C
0.1 1 10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
T = 25°C
0.1
0.4 0.6 0.8 1.0
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.2
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
5 of 8
www.diodes.com
December 2010
© Diodes Incorporated

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