(PDF) CEG2288 Datasheet - Dual N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEG2288
Descripción	Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 6.2 IDM 25 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 1. 2006.June http://www.cet-mos.com 1 page

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PDF CEG2288 Data sheet ( Hoja de datos )