(PDF) CEG8208 Datasheet - Dual N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEG8208
Descripción	Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V G2 S2 S2 D TSSOP-8 G1 S1 S1 D D 1K G1 1K G2 S1 *Typical value by design D1 S1 2 S1 3 G1 4 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.5 IDM 25 Maximum Power Dissipation PD 1.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 D S2 8D 7 S2 6 S2 5 G2 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 83 Units C/W Details are subject to change without notice . 1 Rev 3. 2006.Aug http://www.cet-mos.com 1 page

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PDF CEG8208 Data sheet ( Hoja de datos )