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PDF APM1110NUB Data sheet ( Hoja de datos )

Número de pieza APM1110NUB
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! APM1110NUB Hoja de datos, Descripción, Manual

APM1110NU/APM1110NUB
®
N-Channel Enhancement Mode MOSFET
Features
100V/10A,
RDS(ON)= 175m(max.) @ VGS=10V
RDS(ON)= 235m(max.) @ VGS=4.5V
ESD Protected
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS + R Tested
g
Pin Description
D
S
G
S
D
G
Top View of TO-252-2
Top View of TO-251
D
Applications
G
Power Management in TV Inverter.
S
N-Channel MOSFET
Ordering and Marking Information
APM1110N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-2 UB : TO-251
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel for TO-252-2 Package
TU : Tube for TO-251 Package
Assembly Material
G : Halogen and Lead Free Device
APM1110N U/UB : APM1110N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - July, 2015
1
www.sinopowersemi.com

1 page




APM1110NUB pdf
APM1110NU/APM1110NUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
15
V =6,7,8,9,10V
GS
12 5V
9
4.5V
6
3
4V
3.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
400
350
V =4.5V
300
GS
250
200
V =10V
GS
150
100
50
0
0 3 6 9 12 15
ID- Drain Current (A)
Gate-Source On Resistance
400
I =5A
DS
350
300
250
200
150
100
50
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - July, 2015
5
www.sinopowersemi.com

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