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Número de pieza | APM1110NUB | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM1110NUB (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! APM1110NU/APM1110NUB
®
N-Channel Enhancement Mode MOSFET
Features
• 100V/10A,
RDS(ON)= 175mΩ (max.) @ VGS=10V
RDS(ON)= 235mΩ (max.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
•
100% UIS + R Tested
g
Pin Description
D
S
G
S
D
G
Top View of TO-252-2
Top View of TO-251
D
Applications
G
• Power Management in TV Inverter.
S
N-Channel MOSFET
Ordering and Marking Information
APM1110N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-2 UB : TO-251
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel for TO-252-2 Package
TU : Tube for TO-251 Package
Assembly Material
G : Halogen and Lead Free Device
APM1110N U/UB : APM1110N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - July, 2015
1
www.sinopowersemi.com
1 page APM1110NU/APM1110NUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
15
V =6,7,8,9,10V
GS
12 5V
9
4.5V
6
3
4V
3.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
400
350
V =4.5V
300
GS
250
200
V =10V
GS
150
100
50
0
0 3 6 9 12 15
ID- Drain Current (A)
Gate-Source On Resistance
400
I =5A
DS
350
300
250
200
150
100
50
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - July, 2015
5
www.sinopowersemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet APM1110NUB.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM1110NU | N-Channel Enhancement Mode MOSFET | Sinopower |
APM1110NUB | N-Channel Enhancement Mode MOSFET | Sinopower |
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