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PDF APM1110K Datasheet ( Hoja de datos )

Número de pieza APM1110K
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
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APM1110K datasheet

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APM1110K pdf
APM1110K
®
Typical Opertaing Characteristics (Cont.)
Output Characteristics
10
9 VGS=4.5,5,6,7,8,9,10V
8
4V
7
6
5
4
3
2 3.5V
1
3V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
320
280
240
V =4.5V
GS
200
160 VGS=10V
120
80
40
0 2 4 6 8 10
ID - Drain Current (A)
Gate-Source On Resistance
400
IDS=2.7A
350
300
250
200
150
100
50
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
5
www.sinopowersemi.com

5 Page

APM1110K arduino
APM1110K
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax)
3 °C/second max.
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
6 °C/second max.
3°C/second max.
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<2.5 mm
235 °C
³2.5 mm
220 °C
Volume mm3
³350
220 °C
220 °C
Table 2. Pb-free Process Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
260 °C
1.6 mm 2.5 mm
260 °C
³2.5 mm
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLD ERA BILIT Y
HTRB
HTGB
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
11
www.sinopowersemi.com

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