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PDF CEB02N9 Data sheet ( Hoja de datos )
| Número de pieza | CEB02N9 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEB02N9 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CEP02N9/CEB02N9
CEF02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP02N9
CEB02N9
CEF02N9
VDSS
900V
900V
900V
RDS(ON)
6.8Ω
6.8Ω
6.8Ω
ID
2.6A
2.6A
2.6A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
VDS 900
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID
IDM e
PD
2.6
1.9
10.4
125
0.83
2.6 d
1.9 d
10.4 d
47
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
62.5
3.2
62.5
Units
V
V
A
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.May
http://www.cet-mos.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEB02N9.PDF ] | |
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