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PDF CEB1186 Data sheet ( Hoja de datos )
| Número de pieza | CEB1186 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEB1186 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CEP1186/CEB1186
CEF1186
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1186
CEB1186
CEF1186
VDSS
800V
RDS(ON)
2.3Ω
ID
6A
@VGS
10V
800V 2.3Ω 6A 10V
800V 2.3Ω
6A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS
VGS
ID
IDM e
PD
800
±30
6
24
166
1.3
EAS 9.4
IAS 2.5
TO-220F
6d
24d
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev 2. 2012.Feb
http://www.cet-mos.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEB1186.PDF ] | |
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