DataSheet.es    


PDF 28N15 Data sheet ( Hoja de datos )

Número de pieza 28N15
Descripción FQA28N15
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 28N15 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! 28N15 Hoja de datos, Descripción, Manual

FQA28N15
N-Channel QFET® MOSFET
150 V, 33 A, 90 mΩ
June 2014
Description
Features
This N-Channel enhancement mode power MOSFET is 33 A, 150 V, RDS(on) = 90 m(Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC)
resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF)
high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested
control, and variable switching power applications.
175°C Maximum Junction Temperature Rating
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQA28N15
150
33
23.3
132
± 25
300
33
22.7
5.5
227
1.52
-55 to +175
300
Thermal Characteristics

+θ 
+θ

Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQA28N15
0.66
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

6?
6?
©2000 Fairchild Semiconductor Corporation
FQA28N15 Rev. C2
1
www.fairchildsemi.com

1 page




28N15 pdf
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA28N15 Rev. C2
5
www.fairchildsemi.com

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet 28N15.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
28N15FQA28N15Fairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar