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PDF BD87A34FVM-TR Data sheet ( Hoja de datos )

Número de pieza BD87A34FVM-TR
Descripción Voltage Detector ICs
Fabricantes ROHM Semiconductor 
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Datasheet
Voltage Detectors
Voltage Detector ICs with Watchdog Timer
BD37Axx Series BD87Axx Series BD99A41F
General Description
The BD37A19FVM, BD37A41FVM, BD87A28FVM,
BD87A29FVM, BD87A34FVM, BD87A41FVM and
BD99A41F are watchdog timer reset ICs. It delivers a
high precision detection voltage of ±1.5% and a
super-low current consumption of 5 µA (Typ). It can be
used in a wide range of electronic devices to monitor
power supply voltages and in system operation to
prevent runaway operation.
Features
Built-in Watchdog Timer
Reset delay time can be set with the CT pin's
external capacitance
Watchdog timer monitor time and reset time can be
set with the CTW pin's external capacitance.
Output Circuit Type: N-Channel Open Drain
Key Specifications
RESET Power Supply Voltage Range: 1.0V to 10V
WDT Power Supply Voltage Range: 2.5V to 10V
High Precision Detection Voltage:
(Ta = 25°C)
±1.5%
(Ta = 40°C to 105°C)
±2.5%
Super-Low Current Consumption:
5μA(Typ)
Operating Temperature Range: -40°C to +105°C
Packages
MSOP8
W (Typ) x D (Typ) x H (Max)
2.90mm x 4.00mm x 0.90mm
Applications
All devices using microcontrollers or DSP, including
vehicle equipment, displays, servers, DVD players,
and telephone systems
SOP8
5.00mm x 6.20mm x 1.71mm
Ordering Information
B D3 7 A 1 9 F VM
-
TR
Part Number
37AWDT H Active
87AWDT L Active
99AWDT H Active
Detection Voltage Package
191.9V
282.8V
292.9V
343.4V
414.1V
FVM : MSOP8
F : SOP8
Packaging and forming specification
TR: Embossed tape and reel
E2: Embossed tape and reel
Lineup
Detection voltage (Typ)
1.9V
4.1V
2.8V
2.9V
3.4V
4.1V
4.1V
INH logic
H: Active
H: Active
L: Active
L: Active
L: Active
L: Active
H: Active
Package
MSOP8
Reel of 3000
MSOP8
Reel of 3000
MSOP8
Reel of 3000
MSOP8
Reel of 3000
MSOP8
Reel of 3000
MSOP8
Reel of 3000
SOP8
Reel of 2500
Orderable Part Number
BD37A19FVM-TR
BD37A41FVM-TR
BD87A28FVM-TR
BD87A29FVM-TR
BD87A34FVM-TR
BD87A41FVM-TR
BD99A41F-E2
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has not designed protection against radioactive rays
1/15
TSZ02201-0G1G0AN00130-1-2
05.Sep.2014 Rev.003

1 page




BD87A34FVM-TR pdf
BD37Axx Series BD87Axx Series BD99A41F
Typical Performance Curves
(Unless otherwise specified, Ta = 25°C) : 4.1V Detection
Datasheet
12
10
8
6
4
2
0
0
10
8
Ta=105°C
6
Ta=25°C
4
Ta=-40°C
2
2468
SUPPLY VOLTAGE: VDD [V]
Figure 3. Detection Voltage
10
0
0 2 4 6 8 10
SUPPLY VOLTAGE: VDD [V]
Figure 4. Total Supply Current
400 2
350
1.5
300
1
250
200 0.5
150
100
50
0
0 12 34 5
SUPPLY VOLTAGE: VDD [V]
Figure 5. Delay Pin Current vs Power Supply Voltage
0
-0.5
-1
012 34
CTW PIN VOLTAGE: VCTW [V]
Figure 6. CTW Charge Discharge Current
5
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
5/15
TSZ02201-0G1G0AN00130-1-2
05.Sep.2014 Rev.003

5 Page





BD87A34FVM-TR arduino
BD37Axx Series BD87Axx Series BD99A41F
Datasheet
Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin A
Pin B
C
B
E
Pin B
P+
NN
Parasitic
Elements
P P+
NN
P Substrate
GND
Parasitic
Elements
N P+
N P N P+ N
P Substrate
Parasitic
GND GND
Elements
Figure 18. Example of monolithic IC structure
B
N Region
close-by
C
E
Parasitic
Elements
GND
12. Applications or inspection processes with modes where the potentials of the VDD pin and other pins may be reversed
from their normal states may cause damage to the IC’s internal circuitry or elements. Use an output pin capacitance
of 1000 µF or lower in case VDD is shorted with the GND pin while the external capacitor is charged. It is
recommended to insert a diode for preventing back current flow in series with VDD or bypass diodes between VDD
and each pin.
Back current prevention diode
Bypass diode
VDD Pin
Figure 19.
13. When VDD falls below the operating marginal voltage, output will be open. When output is being pulled up to input,
output will be equivalent to VDD.
14. Regarding the CLK and INH pins
The CLK and INH pins comprise inverter gates and should not be left open. (These pins should be either pulled up or
down.) Input to the CLK pin is detected using a positive edge trigger and does not affect the CLK signal duty. Input
the trigger to the CLK pin within the tWH time.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
11/15
TSZ02201-0G1G0AN00130-1-2
05.Sep.2014 Rev.003

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