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PDF ZXMS6006DGQ Data sheet ( Hoja de datos )

Número de pieza ZXMS6006DGQ
Descripción 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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  Green
ZXMS6006DGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Continuos Drain Source Voltage 60V
On-State Resistance
100mΩ
Nominal Load Current (VIN = 5V) 2.8A
Clamping Energy
490mJ
Description and Applications
The ZXMS6006DGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6006DGQ is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
SOT223
Top View
D
IN
S
Device Symbol
S
DD
IN
Top View
Pin Out
Ordering Information (Note 3)
Product
ZXMS6006DGQTA
Marking
ZXMS6006D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6006D
ZXMS6006D = Product type Marking Code
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
1 of 8
Document number: DS35142 Rev. 1 - 2
www.diodes.com
June 2014
© Diodes Incorporated

1 page




ZXMS6006DGQ pdf
Typical Characteristics
ZXMS6006DGQ
16
14
VIN
5V
12 4.5V
10
4V
3.5V
8 3V3V
6 2.5V
4
2V
2 TA = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS Drain-Source Voltage (V)
Typical Output Characteristic
0.20
0.15
0.10
ID = 1A
TJ = 150°C
0.05
TJ = 25°C
0.00
2.0 2.5 3.0 3.5 4.0 4.5
VIN Input Voltage (V)
On-Resistance vs Input Voltage
5.0
0.20
0.15
0.10
0.05
VIN = 3V
VIN = 5V
120
100
80
60
40
20
0
01234
VIN Input Voltage (V)
Input Current vs Input Voltage
5
1.4
1.3 VIN = VDS
1.2 ID = 1mA
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
Threshold Voltage vs Temperature
10
TJ=150°C
1
TJ=25°C
0.1
0.00-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.01
0.4 0.6 0.8
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
1.0
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
5 of 8
Document number: DS35142 Rev. 1 - 2
www.diodes.com
June 2014
© Diodes Incorporated

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