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PDF SVF4N60F Data sheet ( Hoja de datos )

Número de pieza SVF4N60F
Descripción 600V N-CHANNEL MOSFET
Fabricantes SILAN MICROELECTRONICS 
Logotipo SILAN MICROELECTRONICS Logotipo



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SVF4N60F Hoja de datos, Descripción, Manual
SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement
mode power MOS field effect transistor which is produced
using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
4A, 600V, RDS(on)(typ)=2.0@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60DTR
SVF4N60MJ
SVF4N60M
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-262-3L
TO-252-2L
TO-252-2L
TO-251J-3L
TO-251D-3L
Marking
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60D
SVF4N60MJ
SVF4N60M
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
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Tape & Reel
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REV:1.6
2012.07.24
Page 1 of 11

1 page

SVF4N60F pdf
Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 9-3. Max. Safe Operating
Area(SVF4N60D/M)
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-5. Max. Safe Operating
Area(SVF4N60K)
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-4. Max. Safe Operating
Area(SVF4N60MJ)
102
Operation in This Area is
Limited by RDS(ON)
101
100
100µs
1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
4
3
2
1
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
Page 5 of 11

5 Page

SVF4N60F arduino
Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
ATTACHMENT
Revision History
Date
2010.12.13
2011.08.26
2012.01.18
2012.03.12
2012.03.22
2012.06.04
2012.07.24
REV
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Description
Original
Add the packages of TO-251-3L and TO-251D-3L
Add the packages of TO-251J-3L and TO-262-3L;
Delete the package of TO-251-3L
Add the halogen free information of SVF4N60F
The package outline of TO-220F-3L(1) and TO-220F-3L(2) are
changed.
Modify the values of Trr and Qrr; Update the package outline of TO-251D-
3L
Modify “ELECTRICAL CHARACTERISTICS”
Page
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
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