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PDF 6NK60Z Data sheet ( Hoja de datos )
| Número de pieza | 6NK60Z | |
| Descripción | STB6NK60Z | |
| Fabricantes | STMicroelectronics | |
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STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
VDSS
600 V
600 V
600 V
600 V
RDS(on) ID
PW
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 30 W
< 1.2 Ω 6 A 110 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
www.DataSheet4U.com
3
2
1
TO-220
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB6NK60Z
B6NK60Z
STB6NK60Z-1
B6NK60Z
STP6NK60ZFP
P6NK60ZFP
STP6NK60Z
P6NK60Z
Package
D²PAK
I²PAK
TO-220FP
TO-220
November 2007
Rev 8
Packaging
Tape & reel
Tube
Tube
Tube
1/17
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17
1 page  
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 3 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
14 ns
14 ns
47 ns
19 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 6 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
6
24
1.6
445
2.7
12
A
A
V
ns
µC
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown
voltage
Eggs± 1 mA (open drain) 30
V
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1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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5 Page 
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
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