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PDF IRF9530 Data sheet ( Hoja de datos )
| Número de pieza | IRF9530 | |
| Descripción | P-Channel Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
IRF9530, RF1S9530SM
January 2002
12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
field effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. The high input impedance allows these
types to be operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9530
TO-220AB
IRF9530
RF1S9530SM
TO-263AB
RF1S9530
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
Features
• 12A, 100V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263A
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B
1 page  
IRF9530, RF1S9530SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
400
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
200 CRSS
0 0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
TJ = -55oC
TJ = 25oC
4 TJ = 125oC
3
2
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0 -4 -8 -12 -16 -20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -12A
-5
- 10
VDS = -20V
VDS = -50V
VDS = -80V
- 15
0 8 16 24 42 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRF9530, RF1S9530SM Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9530.PDF ] | |
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