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PDF 2SC2786 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2786 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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RoHS
2SC2786
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
* Complement to S9015LT1
* Collector Current: Ic= 100mA
D* Collector-Emitter Voltage:Vce= 45V
* High Total Power Dissipation:Pc=225mW
T* High Hfe And Good Linearity
.,LABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
50
OCollector-Emitter Voltage
Vceo
45
Emitter-Base Voltage
Vebo
5
CCollector Current
Ic 100
Collector Dissipation Ta=25 *
PD 225
ICJunction Temperature
Tj 150
Storage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
NELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
OCollector-Base Breakdown Voltage BVcbo 50
Collector-Emitter
Breakdown BVceo 45
RVoltage#
Emitter-Base Breakdown Voltage
BVebo 5
TCollector-Base Cutoff Current
Icbo
50
Emitter-Base Cutoff Current
Iebo
50
CDC Current Gain
Hfe 60 300 1000
ECollector-Emitter Saturation Voltage Vce(sat)
0.3
Base-Emitter Saturation Voltage
Vbe(sat)
1.00
LBase-Emitter on Voltage
Vbe(on) 0.58 0.63 o.7
Output Capacitance
Cob 2.2 3.5
ECurrent Gain-Bandwidth Product
fT 150 270
Noise Figure
NF 10
J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
E# Pulse Test : Pulse Width 300uS,Duty cycle 2%
W DEVICE MARKING: 2SC2786=L6,F1X
Unit
V
V
V
nA
nA
V
V
V
PF
MHz
dB
Test Conditions
Ic=100uA Ie=0
Ic= 1mA Ib=0
Ie= 100uA Ic=0
Vcb= 50V Ie=0
Veb= 5V Ic= 0
Vce= 5V Ic= 1mA
Ic= 100mA Ib= 5mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC2786.PDF ] | |
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