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PDF IRF8308MTRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF8308MTRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRF8308MPbF
DirectFET Power MOSFET
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
28nC 8.2nC 3.5nC 34nC 20nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-
state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries
used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher
frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-
induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Orderable part number
IRF8308MTRPbF
IRF8308MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
8
ID = 27A
6
12
10 ID= 21A
8
Max.
30
±20
27
21
150
212
12
21
VDS= 24V
VDS= 15V
Units
V
A
mJ
A
4
TJ = 125°C
6
4
2
TJ = 25°C
2
0
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2014 International Rectifier
0
0 20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
Submit Datasheet Feedback
February 24, 2014
1 page  
IRF8308MPbF
1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
150
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100μsec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
1msec
10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
100 ID = 100μA
1.5
50
1.0
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
50
40
30
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 7.2A
8.4A
BOTTOM 21A
20
10
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
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