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PDF CED6336 Datasheet ( Hoja de datos )

Número de pieza CED6336
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes CET 
Logotipo CET Logotipo

Total 4 Páginas
		
CED6336 Hoja de datos, Descripción, Manual
CED6336/CEU6336
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 25A , RDS(ON) = 41m@VGS = 10V.
RDS(ON) = 55m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
25
100
40
0.06
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.2
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Jan
http://www.cetsemi.com

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