(PDF) CED84A4 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CED84A4
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C VDS VGS ID 40 ±20 80 56 Drain Current-Pulsed a IDM 320 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 57.7 0.38 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.6 50 Units V V A A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2011.Mar http://www.cet-mos.com 1 page

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PDF CED84A4 Data sheet ( Hoja de datos )