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Número de pieza | 60N321 | |
Descripción | GT60N321 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 60N321 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications
Fourth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
⎯
1000
±25
60
120
15
120
170
150
−55 to 150
0.8
V
V
A
A
W
°C
°C
N・m
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
TOSHIBA
GT60N321
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2010-01-07
1 page 103 Rth (t) – tw
Tc = 25°C
102
101
100
10−1
Diode Stage
IGBT Stage
10−2
10−130−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
Irr, trr – IECF
10 2
Common emitter
di/dt = −20 A/μs
9
Tc = 25°C
1.6
8 1.2
trr
Irr
7 0.8
6 0.4
50
0 20 40 60 80 100
Emitter-collector forward current IECF (A)
GT60N321
100
Common
コレcoクlleタcto接r 地
80
IECF – VECF
60
40
20
0
0.0
Tc = 125°C
0.5 1.0
−40
25
1.5
2.0
2.5
Collector-emitter forward voltage VECF (V)
Irr, trr – di/dt
50 1
trr
40
Common emitter
IECF = 60 A
Tc = 25°C
0.8
30 0.6
20 0.4
10 0.2
00
0 50 100 150 200 250
di/dt (A/μs)
5 2010-01-07
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 60N321.PDF ] |
Número de pieza | Descripción | Fabricantes |
60N321 | GT60N321 | Toshiba Semiconductor |
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