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PDF IRF8301MPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF8301MPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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StrongIRFET
IRF8301MTRPbF
l Ultra-low RDS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3mΩ@10V 1.9mΩ@ 4.5V
MT
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Ordering Information
Base Part Number
IRF8301MPbF
Package Type
DirectFET MT
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8301MTRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
6
5 ID = 32A
4
3
2 TJ = 125°C
1 TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Max.
±20
34
27
192
250
260
25
Units
A
mJ
A
5.0
4.0
ID= 25A VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50
QG, Total Gate Charge (nC)
60
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
1 www.irf.com © 2013 International Rectifier
September 6, 2013
1 page  
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
2.5V
1
0.1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1000
100
VDS = 15V
≤60µs PULSE WIDTH
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
1000
100
IRF8301MTRPbF
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
2.5V
10
1
0.1
≤60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Output Characteristics
2.0
ID = 32A
1.5
VGS = 10V
VGS = 4.5V
1.0
0.1
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
Fig 7. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
5 www.irf.com © 2013 International Rectifier
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 8. Normalized On-Resistance vs. Temperature
5
Vgs = 3.5V
Vgs = 4.0V
4
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
3
TJ = 25°C
2
1
0
0 50 100 150 200
ID, Drain Current (A)
Fig 10. Typical On-Resistance vs.
Drain Current and Gate Voltage
September 6, 2013
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF8301MPbF.PDF ] | |
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