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Número de pieza | DMG9N65CT | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DMG9N65CT
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
650V
RDS(ON)
1.3Ω @ VGS = 10V
Package
TO-220AB
ID
TC = +25°C
9.0 A
Description
This new generation complementary dual MOSFET features low on-
resistance and fast switching, making it ideal for high-efficiency power
management applications.
Applications
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions
Features
• Low Input Capacitance
• High BVDss rating for Power Application
• Low Input/Output Leakage
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO-220AB
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram Below
• Weight: TO-220AB – 1.85 grams (Approximate)
TO-220AB
D
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG9N65CT
Case
TO-220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO-220AB
9N65CT
YYWW AB
9N65CT = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 11 = 2011)
WW = Week (01 - 53)
DMG9N65CT
Document number: DS35619 Rev. 7 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
1 page DMG9N65CT
100
10 RDS(on)
Limited
1
DC
0.1
PW = 10s
PW = 1s
PW = 100ms
0.01
TJ(max) = 150°C
TA = 25°C
VGS = 10V
PW = 10ms
PW = 1ms
PW = 100µs
Single Pulse
0.001 DUT on 1 * MRP Board
1 10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
1,000
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.001
0.01
RθJA(t) = r(t) * RθJA
RθJA = 57°C/W
Duty Cycle, D = t1/t2
0.1 1
10 100
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
1,000
10,000
DMG9N65CT
Document number: DS35619 Rev. 7 - 2
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMG9N65CT.PDF ] |
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