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PDF K4S280432F-UL75 Data sheet ( Hoja de datos )

Número de pieza K4S280432F-UL75
Descripción 128Mb F-die SDRAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K4S280432F-UL75 Hoja de datos, Descripción, Manual

SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
128Mb F-die SDRAM Specification
t4U.com54 TSOP-II with Pb-Free
e(RoHS compliant)
w.DataSheRevision 1.2
ww August 2004
heet4U.com* Samsung Electronics reserves the right to change products or specification without notice.
www.DataSRev. 1.2 August 2004

1 page




K4S280432F-UL75 pdf
SDRAM 128Mb F-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
Data Input Register
CLK
ADD
Bank Select
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
LWE
LDQM
DQi
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.2 August 2004

5 Page





K4S280432F-UL75 arduino
SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
CLK cycle
time
CAS latency=3
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
Output data
hold time
CAS latency=3
CAS latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output CAS latency=3
in Hi-Z
CAS latency=2
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
- 60 (x16 only)
Min Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
- 75
Min
7.5
10
3
3
2.5
2.5
1.5
0.8
1
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Max
1000
5.4
6
5.4
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1,2
2
3
3
3
3
2
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
trh
tfh
trh
tfh
Condition
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Min
1.37
1.30
2.8
2.0
Typ
3.9
2.9
Notes : 1. Rise time specification based on 0pF + 50 to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Max
4.37
3.8
5.6
5.0
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.2 August 2004

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