|
|
PDF FSS234R Data sheet ( Hoja de datos )
| Número de pieza | FSS234R | |
| Descripción | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FSS234R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FSS234D, FSS234R
June 1998
6A, 250V, 0.600 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
• 6A, 250V, rDS(ON) = 0.600Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSS234D1
10K TXV
FSS234D3
100K
100K
Commercial
TXV
FSS234R1
FSS234R3
100K
Space
FSS234R4
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specifi-
cally designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
D
G
Formerly available as type TA17638.
S
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-83
File Number 4053.2
1 page  
FSS234D, FSS234R
Typical Performance Curves Unless Otherwise Specified (Continued)
30
10
STARTING TJ = 150oC
STARTING TJ = 25oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED
BVDSS - VDD) + 1]
1
0.001
0.01
0.1
1
tAV , TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
10
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V -150V
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VGS = 12V
0V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
3-87
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSS234R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FSS234 | N-Channel Silicon MOSFET |  Sanyo |
| FSS234D | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | Intersil Corporation |
| FSS234D1 | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | Intersil Corporation |
| FSS234D3 | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |