DataSheet.es    


PDF VUO190-12NO7 Data sheet ( Hoja de datos )

Número de pieza VUO190-12NO7
Descripción Standard Rectifier Module
Fabricantes IXYS 
Logotipo IXYS Logotipo



Hay una vista previa y un enlace de descarga de VUO190-12NO7 (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! VUO190-12NO7 Hoja de datos, Descripción, Manual

Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO190-12NO7
B- C~ D~ E~ A+
VUO190-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
240 A
2800 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-E
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130328a

1 page




VUO190-12NO7 pdf
VUO190-12NO7
Rectifier
240
200
2500
50Hz, 80% VRRM
160
IF 120
[A] 80
40 TVJ = 150°C
TVJ = 125°C
0
0.5
TVJ = 25°C
1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
2000
IFSM
[A]
1500
TVJ = 45°C
TVJ = 150°C
1000
0.001
0.01 0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
105
50 Hz
0.8 x V RRM
104
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 789
t [ms]
Fig. 3 I2t vs. time per diode
100
80
60
Ptot
40
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0
0 20 40 60 80 100 0 25 50 75 100 125 150 175
IdAVM [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
1
280
240
200
IdAV
160
[A] 120
DC =
1
0.5
0.4
0.33
0.17
0.08
80
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.1
ZthJC
[K/W]
0.01
0.001
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.050
0.003
0.100
0.177
0.070
ti
0.02
0.01
0.225
0.8
0.58
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130328a

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet VUO190-12NO7.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
VUO190-12NO7Standard Rectifier ModuleIXYS
IXYS
VUO190-12NO7Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar