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PDF VUO160-12NO7 Data sheet ( Hoja de datos )
| Número de pieza | VUO160-12NO7 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO160-12NO7
B- C~ D~ E~ A+
VUO160-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
175 A
1800 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
1 page  
VUO160-12NO7
Rectifier
200
160
120
IF
80
[A]
TVJ = 150°C
40
0
0.5
TVJ = 125°C
TVJ = 25°C
1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
1600
1400
IFSM
1200
[A]
1000
800
50Hz, 80% VRRM
TVJ = 45°C
TVJ = 150°C
600
0.001
0.01 0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
80
60
Ptot
40
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
20
0
0 20 40 60 0 25 50 75 100 125 150 175
IdAVM [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
1
105
50 Hz
0.8 x V RRM
104
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 789
t [ms]
Fig. 3 I2t vs. time per diode
240
200
160
IdAV
120
[A]
80
DC =
1
0.5
0.4
0.33
0.17
0.08
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.1
ZthJC
[K/W]
0.01
0.001
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.050
0.003
0.120
0.217
0.110
ti
0.02
0.01
0.225
0.8
0.58
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO160-12NO7.PDF ] | |
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