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PDF VUO105-12NO7 Datasheet ( Hoja de datos )

Número de pieza VUO105-12NO7
Descripción Standard Rectifier Module
Fabricantes IXYS 
Logotipo IXYS Logotipo

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VUO105-12NO7 Hoja de datos, Descripción, Manual
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO105-12NO7
- ~~~ +
VUO105-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
120 A
1500 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-C
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612a

1 page

VUO105-12NO7 pdf
VUO105-12NO7
Rectifier
200
160
IF 120
[A] 80
TVJ =
125°C
40 150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
1200
1100
1000
IFSM
900
[A]
800
700
50 Hz
0.8 x V RRM
TVJ = 45°C
TVJ = 150°C
12000
VR = 0 V
10000
I2t
8000
[A2s]
6000
4000
TVJ = 45°C
TVJ = 150°C
600
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
vs. time per diode
2000
1
t [ms]
10
Fig. 3 I2t versus time per diode
50
40
Ptot 30
DC =
1
0.5
0.4
0.33
0.17
0.08
[W]
20
RthJA:
0.2 KW
0.4 KW
0.6 KW
0.8 KW
1.0 KW
2.0 KW
10
0
0 10 20 30 40 50 0
IF(AV)M [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
140
120
100
IF(AV)M
80
[A]
60
DC =
1
0.5
0.4
0.33
0.17
0.08
40
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.8
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.100
2 0.014
3 0.192
4 0.281
5 0.213
ti (s)
0.020
0.010
0.225
0.800
0.580
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612a

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