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PDF VUO110-18NO7 Datasheet ( Hoja de datos )

Número de pieza VUO110-18NO7
Descripción Standard Rectifier Module
Fabricantes IXYS 
Logotipo IXYS Logotipo

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VUO110-18NO7 Hoja de datos, Descripción, Manual
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO110-18NO7
B- C~ D~ E~ A+
VUO110-18NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1800 V
125 A
1200 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-E
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b

1 page

VUO110-18NO7 pdf
VUO110-18NO7
Rectifier
200
160
120
IF
80
[A]
T
VJ
=
150°C
40
TVJ = 125°C
TVJ = 25°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
1000
50Hz, 80% VRRM
800
IFSM
[A]
600
TVJ = 45°C
TVJ = 150°C
400
0.001
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
104
50 Hz
0.8 x V RRM
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 7 89
t [ms]
Fig. 3 I2t vs. time per diode
50
40
Ptot
30
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
10
0
0 10 20 30 40 50 0 25 50 75 100 125 150 175
IFAV [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.8
160
120
IFAVM
80
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.100
0.010
0.162
0.258
0.170
ti
0.020
0.010
0.225
0.800
0.580
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b

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