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PDF VUO68-16NO7 Data sheet ( Hoja de datos )

Número de pieza VUO68-16NO7
Descripción Standard Rectifier Module
Fabricantes IXYS 
Logotipo IXYS Logotipo



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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO68-16NO7
K NHA D
VUO68-16NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
70 A
300 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: ECO-PAC1
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 9 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b

1 page




VUO68-16NO7 pdf
VUO68-16NO7
Rectifier
80
300
50 Hz
0.8 x V RRM
1000
VR = 0 V
60 250
IF
40
[A]
20
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
IFSM
200
[A]
150
TVJ = 45°C
TVJ = 150°C
100
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
100
1
t [ms]
10
Fig. 3 I2t versus time per diode
40
35
30
25
Ptot
20
[W] 15
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
10
5
0
0 5 10 15 20 25 30 0
IdAVM [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
100
80
IF(AV)M60
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
1.2
1.0
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.05070 0.004
2 0.163
0.0025
3 0.2805
0.0035
4 0.363
0.02
5 0.2228
0.15
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140226b

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