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PDF FSPYC260F Data sheet ( Hoja de datos )
| Número de pieza | FSPYC260F | |
| Descripción | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
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TM
Data Sheet
FSPYC260R, FSPYC260F
May 2000 File Number 4850.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low rDS(ON) and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADS while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.
The Intersil portfolio of Star*Power FETS includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETS are optimized for total dose
and rDS(ON) performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETS
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either, TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45211W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering samples FSPYC260D1
100K
TXV
FSPYC260R3
100K
Space
FSPYC260R4
300K
TXV
FSPYC260F3
300K
Space
FSPYC260F4
Features
• 58A, 200V, rDS(ON) = 0.031Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 100% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
Packaging
G
S
SMD2
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1 page  
FSPYC260R, FSPYC260F
Performance Curves Unless Otherwise Specified (Continued)
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10-5
SINGLE PULSE
10-4
10-3
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
PDM
100
t1 t2
300
100 STARTING TJ = 25oC
101
STARTING TJ = 150oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V-150V
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSPYC260F.PDF ] | |
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