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PDF VUO82-12NO7 Data sheet ( Hoja de datos )

Número de pieza VUO82-12NO7
Descripción Standard Rectifier Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO82-12NO7
- ~~~ +
VUO82-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
90 A
750 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: PWS-D
Industry standard outline
RoHS compliant
Easy to mount with two screws
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410a

1 page




VUO82-12NO7 pdf
VUO82-12NO7
Rectifier
120
100
600
50 Hz
0.8 x V RRM
10000
VR = 0 V
80
IF
60
[A]
40
500
IFSM
400
[A]
TVJ = 45°C
TVJ = 150°C
I2t
1000
[A2s]
TVJ = 45°C
TVJ = 150°C
20 TVJ =
125°C
150°C
0
0.4
0.8
TVJ = 25°C
1.2
1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
300
0.001
0.010
0.100
1.000
t [s]
Fig. 2 Surge overload current
100
1
t [ms]
10
Fig. 3 I2t versus time per diode
40
30
Ptot
20
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
0
0 10 20 30 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
120
100
80
IF(AV)M
60
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
1.0
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rth (K/W)
1 0.05
2 0.14
3 0.18
4 0.28
5 0.25
ti (s)
0.001
0.030
0.070
0.150
0.950
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410a

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