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Número de pieza | VUO55-16NO7 | |
Descripción | Standard Rectifier Module | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VUO55-16NO7 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO55-16NO7
- ~~~ +
VUO55-16NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
60 A
750 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-B
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Aluminium
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130306a
1 page VUO55-16NO7
Rectifier
100
80
600
50 Hz
0.8 x V RRM
3000
VR = 0 V
2500
IF 60
[A] 40
20 TVJ = 125°C
150°C
TVJ = 25°C
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
500
IFSM
[A]
400
TVJ = 45°C
TVJ = 130°C
2000
I2t
1500
[A2s]
1000
TVJ = 45°C
TVJ = 130°C
300
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
500
1
t [ms]
10
Fig. 3 I2t vs. time per diode
24
18
Ptot
12
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
6
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
60
40
IF(AV)M
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 5 10 15 20 0 25 50 75 100 125 150
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
Constants for ZthJC calculation:
i Rth (K/W)
1 0.040
2 0.150
3 0.610
4 1.900
ti (s)
0.010
0.030
1.350
14.00
0.0
1
10
100
1000
10000
100000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130306a
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet VUO55-16NO7.PDF ] |
Número de pieza | Descripción | Fabricantes |
VUO55-16NO7 | Standard Rectifier Module | IXYS Corporation |
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