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PDF VUO52-12NO1 Data sheet ( Hoja de datos )

Número de pieza VUO52-12NO1
Descripción Standard Rectifier Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO52-12NO1
4/5
6 8 10
1/2
VUO52-12NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
60 A
350 A
Features / Advantages:
Package with DCB ceramic
Reduced weight
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: V1-A-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 17 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b

1 page




VUO52-12NO1 pdf
VUO52-12NO1
Rectifier
80
300
50 Hz
0.8 x V RRM
1000
VR = 0 V
60
IF
40
[A]
20
TVJ = 125°C
150°C
250
IFSM
200
[A]
150
TVJ = 45°C
TVJ = 130°C
I2t
[A2s]
TVJ = 45°C
TVJ = 130°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6 2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
100
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
100
1
t [ms]
10
Fig. 3 I2t versus time per diode
30
25
20
Ptot
15
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
5
0
0 5 10 15 20 25 0
IdAVM [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
80
60
IF(AV)M
40
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
1.6
1.2
ZthJC
0.8
[K/W]
0.4
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.06070 0.008
2 0.173
0.05
3 0.3005
0.06
4 0.463
0.3
5 0.3028
0.15
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130305b

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