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PDF VUO30-12NO3 Data sheet ( Hoja de datos )
| Número de pieza | VUO30-12NO3 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO30-12NO3
- ~~~ +
VUO30-12NO3
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
45 A
300 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: FO-F-B
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● ¼“ fast-on terminals
● Easy to mount with two screws
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
1 page  
VUO30-12NO3
Rectifier
30 250 500
50 Hz
0.8 x V RRM
VR = 0 V
225
400
20
IF
[A]
10
200
IFSM
175
[A]
150
TVJ = 45°C
TVJ = 150°C
I2t
300
[A2s]
200
TVJ = 45°C
TVJ = 150°C
TVJ =
125°C
150°C
0
0.4 0.6
TVJ = 25°C
0.8 1.0
VF [V]
1.2
1.4
Fig. 1 Forward current vs.
voltage drop per diode
125
100
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
100
0
1 10
t [ms]
Fig. 3 I2t vs. time per diode
20
16
Ptot 12
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] 8
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
4
0
0 4 8 12 16 0 25 50 75 100 125 150 175
IF(AV)M [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
60
50
40
IF(AV)M
30
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
10
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
2.5
2.0
1.5
ZthJC
1.0
[K/W]
0.5
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.0607
2 0.2030
3 0.5005
4 0.7030
5 0.5328
ti (s)
0.00040
0.00256
0.00450
0.02420
0.15000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO30-12NO3.PDF ] | |
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