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PDF VUO34-16NO1 Data sheet ( Hoja de datos )

Número de pieza VUO34-16NO1
Descripción Standard Rectifier Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO34-16NO1
4/5
6 8 10
1/2
VUO34-16NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
45 A
300 A
Features / Advantages:
Package with DCB ceramic
Reduced weight
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: V1-A-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 17 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

1 page




VUO34-16NO1 pdf
VUO34-16NO1
Rectifier
50
40
280
240
50 Hz
0.8 x V RRM
VR = 0 V
400
IF 30
[A] 20
10
TVJ =
125°C
150°C
TVJ = 25°C
0
0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
1.6
Fig. 1 Forward current vs.
voltage drop per diode
IFSM
200
[A]
160
TVJ = 45°C
TVJ = 150°C
I2t 300
[A2s]
200
TVJ = 45°C
TVJ = 150°C
100
120
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
1 10
t [ms]
Fig. 3 I2t vs. time per diode
24
20
16
Ptot
12
[W]
8
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
4
0
0 4 8 12 16 20 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
36
32
28
24
IF(AV)M 20
[A] 16
12
DC =
1
0.5
0.4
0.33
0.17
0.08
8
4
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
2.0
1.6
ZthJC
1.2
[K/W]
0.8
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 1.150
2 0.150
3 0.100
4 0.300
ti (s)
0.1015
0.1026
0.4919
0.6200
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b

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