|
|
Número de pieza | VUO34-16NO1 | |
Descripción | Standard Rectifier Module | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VUO34-16NO1 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO34-16NO1
4/5
6 8 10
1/2
VUO34-16NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
45 A
300 A
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: V1-A-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
1 page VUO34-16NO1
Rectifier
50
40
280
240
50 Hz
0.8 x V RRM
VR = 0 V
400
IF 30
[A] 20
10
TVJ =
125°C
150°C
TVJ = 25°C
0
0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
1.6
Fig. 1 Forward current vs.
voltage drop per diode
IFSM
200
[A]
160
TVJ = 45°C
TVJ = 150°C
I2t 300
[A2s]
200
TVJ = 45°C
TVJ = 150°C
100
120
10-3
10-2
10-1
t [s]
100
Fig. 2 Surge overload current
vs. time per diode
1 10
t [ms]
Fig. 3 I2t vs. time per diode
24
20
16
Ptot
12
[W]
8
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
4
0
0 4 8 12 16 20 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
36
32
28
24
IF(AV)M 20
[A] 16
12
DC =
1
0.5
0.4
0.33
0.17
0.08
8
4
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
2.0
1.6
ZthJC
1.2
[K/W]
0.8
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 1.150
2 0.150
3 0.100
4 0.300
ti (s)
0.1015
0.1026
0.4919
0.6200
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet VUO34-16NO1.PDF ] |
Número de pieza | Descripción | Fabricantes |
VUO34-16NO1 | Standard Rectifier Module | IXYS Corporation |
VUO34-16NO1 | Diode ( Rectifier ) | American Microsemiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |