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PDF VUO35-12NO7 Data sheet ( Hoja de datos )
| Número de pieza | VUO35-12NO7 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO35-12NO7
- ~~~ +
VUO35-12NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
35 A
400 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-A
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Aluminium
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
1 page  
VUO35-12NO7
Rectifier
60
50
40
30
20
TVJ =
10
125°C
150°C
0
0.4 0.6 0.8
TVJ = 25°C
1.0 1.2 1.4
1.6
Fig. 1 Forward current vs.
voltage drop per diode
350
300
50 Hz
0.8 x V RRM
250 TVJ = 45°C
TVJ = 150°C
200
150
10-3
10-2
10-1
100
Fig. 2 Surge overload current
vs. time per diode
800
VR = 0 V
600
TVJ = 45°C
400
TVJ = 150°C
200
1 10
Fig. 3 I2t vs. time per diode
16
DC =
1
0.5
12 0.4
0.33
0.17
0.08
8
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
4
0
0 4 8 12 0 25 50 75 100 125 150 175
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
32
28
24
20
16
12
8
4
0
0
DC =
1
0.5
0.4
0.33
0.17
0.08
25 50 75 100 125 150
Fig. 5 Max. forward current vs.
case temperature per diode
5
4
3
2
1
0
1
10
100
1000
10000
100000
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.194
2 0.556
3 0.450
4 3.000
ti (s)
0.024
0.070
3.250
9.300
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO35-12NO7.PDF ] | |
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