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PDF VUO86-08NO7 Data sheet ( Hoja de datos )

Número de pieza VUO86-08NO7
Descripción Standard Rectifier Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO86-08NO7
K NHA D
VUO86-08NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
800 V
90 A
550 A
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: ECO-PAC1
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 9 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130321a

1 page




VUO86-08NO7 pdf
VUO86-08NO7
Rectifier
100
500
50 Hz
0.8 x V RRM
3000
VR = 0 V
80
IF 60
[A] 40
20
TVJ = 125°C
150°C
400
IFSM
[A]
300
TVJ = 45°C
TVJ = 150°C
1000
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
200
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
100
1
t [ms]
10
Fig. 3 I2t versus time per diode
50
DC =
40 1
0.5
0.4
Ptot 30
0.33
0.17
0.08
[W] 20
10
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
100
80
IF(AV)M
60
[A]
40
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 30 40 0 25 50 75 100 125 150
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. direct output current & ambient temperature
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature
1.0
0.8
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10 100 1000
t [ms]
Fig. 6 Transient thermal impedance junction to case
10000
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.0607 0.000
2 0.1230 0.00256
3 0.2330 0.0045
4 0.3230 0.0242
5 0.1628 0.18
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130321a

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