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PDF 2N6773 Data sheet ( Hoja de datos )
| Número de pieza | 2N6773 | |
| Descripción | Silicon NPN Power Transistors | |
| Fabricantes | INCHANGE | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
VBE= -1.5V
2N6771
2N6772
2N6773
450
550
650
V
2N6771
300
VCEO(SUS) Collector-Emitter Voltage
2N6772
2N6773
350
400
V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
ICM Collector Current-Peak
8A
10 A
IB Base Current-Continuous
4A
PC Collector Power Dissipation@TC=25℃ 150
TJ Junction Temperature
200
W
℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Product Specification
2N6771/6772/6773
isc website：www.iscsemi.cn
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6773.PDF ] | |
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