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PDF CEM1010 Data sheet ( Hoja de datos )
| Número de pieza | CEM1010 | |
| Descripción | Single N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CEM1010
Single N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous
TA=25 C
ID
TA=100 C
T=1 sec e
9.5
6
17
T=0.1 sec e
25
Drain Current-Pulsed a
IDM 38
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
A
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Nov.
http://www.cet-mos.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEM1010.PDF ] | |
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