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Número de pieza | CEM6088L | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Chino-Excel Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEM6088L (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEM6088L
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V.
RDS(ON) = 18.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2
876 5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 9
IDM 36
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
62.5
Units
V
V
A
A
W
C
C/W
This is preliminary information on a new product in development now .
Specification and data are subject to change without notice .
1
Rev 1. 2011.Dec
http://www.cet-mos.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEM6088L.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEM6088 | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
CEM6088L | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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