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Número de pieza | CEM8208 | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Chino-Excel Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEM8208 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEM8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V.
RDS(ON) = 32mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ESD Protected: 2000 V
D1 D1 D2 D2
8765
5
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 7
IDM 25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 4. 2007.Oct.
http://www.cet-mos.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEM8208.PDF ] |
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