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MDF10N65B
N-Channel MOSFET 650V, 10.0A, 1.0Ω
General Description
The MDF10N65B MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
MDF10N65B is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 10.0A
RDS(ON) ≤ 1.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
650
±30
10.0*
5.0*
40*
47.7
0.38
15
4.5
212
-55~150
Symbol
RθJA
RθJC
Rating
62.5
2.62
Unit
V
V
A
A
A
W
W/oC
mJ
V/ns
mJ
oC
Unit
oC/W
Jun. 2010 Version 1.2
1 MagnaChip Semiconductor Ltd.