PDF EMM5836V1BT-001 Data sheet ( Hoja de datos )

Número de pieza	EMM5836V1BT-001
Descripción	K-Band Power Amplifier MMIC
Fabricantes	SUMITOMO
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No Preview Available ! EMM5836V1B/001 FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7 to 19.7GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5836V1B is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 17.7 to 19.7GHz frequency range. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. K-Band Power Amplifier MMIC ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 10 -3 23 -55 to +125 Unit V V dBm deg.C RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage VDD Input Power Pin Operating Case Temperature TC Condition =< 6 =<14 -40 to +85 Unit V dBm deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Symbol Test Conditions Frequency Range Gate Bias Voltage Output Power at Pin=13dBm Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation Distortion * Drain Current at 1dB G.C.P. Input Return Loss at Pin=-20dBm Output Return Loss at Pin=-20dBm f Vgg(DC) Pout P1dB G1dB Nadd IM3 Iddrf RLin RLout VDD=6.0V IDD(DC)=1400mA typ. Vgg-Const. Zs=Zl=50ohm * : df=+10MHz Pout=20.0dBm (S.C.L) Limits Min. Typ. Max. Unit 17.7 - 19.7 GHz -0.50 -0.15 -0.01 V 31.5 - 20.5 - -37 33.5 32.5 22 20 -40 - - - - - dBm dBm dB % dBc - 1800 2200 mA - 12 - dB -8- dB G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level ESD Class 0 Note : Based on JEDEC　JESD22-A114C (C=100pF, R=1.5kohm) =< 250V CASE STYLE V1B RoHS COMPLIANCE YES ORDERING INFORMATION Part Number EMM5836V1B/001 EMM5836V1BT/001 Order Unit No Limitation 500pcs. Packing 48 pcs./Tray × 4 Tray = 192 pcs./Packing 500 pcs./Reel × 1 Reel = 500 pcs./Packing Edition 2.0 June 2011 1 1 page Output Power, Drain Current vs. Input Power by Drain Current @VDD=6V, Freq.=17.7GHz 36 2800 34 2600 32 2400 30 2200 28 2000 26 1800 24 1600 22 1400 20 1200 18 1000 16 800 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er (dBm ) 1000m A 1200m A 1400m A 1600m A Output Power, Drain Current vs. Input Power by Drain Current @VDD=6V, Freq.=19.7GHz 36 2800 34 2600 32 2400 30 2200 28 2000 26 1800 24 1600 22 1400 20 1200 18 1000 16 800 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er (dBm ) 1000m A 1200m A 1400m A 1600m A EMM5836V1B/001 K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current @VDD=6V, Freq.=18.7GHz 36 2800 34 2600 32 2400 30 2200 28 2000 26 1800 24 1600 22 1400 20 1200 18 1000 16 800 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er (dBm ) 1000m A 1200m A 1400m A 1600m A Edition 2.0 June 2011 5 5 Page Edition 2.0 June 2011 EMM5836V1B/001 K-Band Power Amplifier MMIC 50 45 40 35 30 25 20 15 10 3 ∆Tch vs. Drain Voltage (Reference) IDD=1400mA 45 6 VDD (V) 7 Note: ∆Tch : Temperature Rise from Backside of the Package to Channel. 1.0E+12 1.0E+11 1.0E+10 1.0E+09 1.0E+08 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 1.0E+02 1.0E+01 50 MTTF vs. Tch Ea=1.56eV 100 150 200 Tch (deg.C) 250 11 11 Page

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